P‐2: Self‐Aligned Indium Gallium Zinc Oxide Thin‐Film Transistor with Source/Drain Regions Treated by NH3Plasma

We present the impact of S/D contact formation by NH 3 , N 2 and He plasma treatment, respectively. NH 3 plasma treatment showed the best electrical properties during the unit test. Furthermore, the self‐aligned a‐IGZO TFT was used NH 3 treatment, with a V th shift of 0.2 V for the positive bias temperature stress.