Phosphorus and Boron Co-diffusion in Silicon for p-PERT Solar Cells Application

This work is a contribution to the study of p ⁺ pn ⁺ structures intended for the manufacture of p-PERT type solar cells. The production method is based on the simultaneous formation of the emitter n ⁺ and the BSF p ⁺ , through the co-diffusion of phosphorus and boron. The co-diffusion was done at three different temperatures; 900°C, 930°C and 960°C. Using these structures, p-PERT cells were produced, all of their properties of which were studied as a function of the co-diffusion temperature. The obtained results showed a clear degradation of electrical parameters of the cells prepared at 930°C. A correlation between the short-circuit current density (J sc ) and the apparent series resistance (R s ^app ) demonstrates that this degradation can be explained by the resistive losses in the emitter and the BSF sides.