异质结
电容
凝聚态物理
材料科学
导带
电荷密度
带偏移量
制作
表面状态
态密度
热传导
硅
分析化学(期刊)
化学
光电子学
带隙
价带
曲面(拓扑)
物理
电子
电极
物理化学
病理
复合材料
医学
量子力学
色谱法
数学
替代医学
几何学
作者
Zhenwei Wang,Daiki Takatsuki,Jianbo Liang,Takahiro Kitada,Naoteru Shigekawa,Masataka Higashiwaki
摘要
We studied electrical properties of n-Si/n-Ga2O3 heterojunctions fabricated by surface-activated bonding. The energy barrier heights (qϕb) at the Si/Ga2O3 interface for different reverse voltages (Vrev) were derived from temperature-dependent current density–voltage (J–V–T) characteristics. With shifting Vrev to the negative direction, qϕb gradually decreased and reached a constant value due to negatively charged interface states. The conduction band offset at the heterointerface was estimated to be 0.18 eV from the Vrev dependence of qϕb. The qϕb calculated from a capacitance of the heterojunction at thermal equilibrium was larger than those derived from the J–V–T characteristics, attributing to spatially inhomogeneous qϕb caused by the non-uniform distribution of the charged interface states. The density of shallow interface states was also extracted from the reverse J–V–T characteristics, which was estimated to be about 6 × 1012 cm−2 eV−1.
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