铁电性
铟
纳米技术
光电探测器
化学
光探测
光电子学
单层
范德瓦尔斯力
数码产品
带隙
材料科学
分子
电介质
物理化学
有机化学
作者
Subhrajit Mukherjee,Elad Koren
标识
DOI:10.1002/ijch.202100112
摘要
Abstract The search for ultrathin and robust ferroelectrics leads to few promising two‐dimensional (2D) materials. In 2 Se 3 has drawn special attention owing to the existence of intercoupled in‐plane (IP) and out‐of‐plane (OOP) ferroelectricity in monolayer form, which makes it a potential candidate for emerging artificial intelligence, information processing and memory applications. In addition, the high optical absorption and phase‐dependent visible to infrared bandgap become advantageous from optoelectronics point‐of‐view. This unique ferroelectric and optoelectronic coupling further leads to explore atomic‐scale multifunctional devices. In this review, we summarized the progress of non‐volatile memory (NVM) and photodetector devices, and their intercoupled applications using 2D In 2 Se 3 . We expect that this review will provide an insight towards the promising future of 2D ferroelectric‐(opto)electronics and motivate researchers for further development towards industrial scale.
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