石墨烯
异质结
GSM演进的增强数据速率
材料科学
金属
氮化硼
原子轨道
电接点
散射
六方晶系
凝聚态物理
纳米技术
光电子学
电子
结晶学
化学
光学
冶金
物理
电信
量子力学
计算机科学
作者
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Huyen T. T. Tran,Takaaki Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory R. Dean
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2013-10-31
卷期号:342 (6158): 614-617
被引量:2615
标识
DOI:10.1126/science.1244358
摘要
Better Contact Along the Edge Electrical contact to graphene is normally done with metal contacts on its flat face, where there are few strong bonding sites for the metal. Wang et al. (p. 614 ) encapsulated graphene with hexagonal boron nitride sheets and made metal contacts along its edge, where bonding orbitals are exposed. The resulting heterostructures had high electronic performance, with room-temperature carrier mobilities near the theoretical phonon-scattering limit.
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