光致发光
单层
插层(化学)
二硫化钼
材料科学
退火(玻璃)
剥脱关节
亚稳态
带隙
半导体
光电子学
纳米技术
化学工程
结晶学
无机化学
石墨烯
化学
复合材料
有机化学
工程类
作者
Goki Eda,Hisato Yamaguchi,Damien Voiry,Takeshi Fujita,Mingwei Chen,Manish Chhowalla
出处
期刊:Nano Letters
[American Chemical Society]
日期:2011-10-28
卷期号:11 (12): 5111-5116
被引量:3596
摘要
A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.
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