二次离子质谱法
纳米
微量分析
粒子(生态学)
飞行时间
材料科学
质谱法
纳米技术
分辨率(逻辑)
航程(航空)
微粒
分析化学(期刊)
化学
环境化学
色谱法
复合材料
人工智能
有机化学
地质学
海洋学
计算机科学
作者
Paul K. Chu,Robert W. Odom,D. Fraser Reich
标识
DOI:10.1016/0254-0584(96)01606-9
摘要
A major cause of semiconductor device failure is contamination of the device surface by particulate matters from process chemicals, airborne particles, or particles flaking off from process equipment. Particle sizes range from tens of micrometers to tens of nanometers in diameter. The new time-of-flight (TOF-SIMS) technique is well suited for this type of analysis because of its high sensitivity, excellent mass and lateral resolution, and unlimited mass range. As an illustration of its potential, data were acquired from different types of particles on solid substrates, and the results demonstrate direct in situ elemental and molecular microanalysis of submicrometer particulates.
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