Nondestructive defect delineation in SiC wafers based on an optical stress technique

The potential of using the optical stress technique to delineate the various defects in silicon carbide (SiC) wafers has been fully demonstrated. The observed defects include micropipes, dislocations, stress striations, grain boundary or dislocation walls, and regions of polytype nonuniformity. Revealed dislocation density is in the range 104–105 cm−2.