Enhancement of ferroelectricity and large dielectric strength of Pb(Zr0.52Ti0.48)O3 thin films on SrTiO3 substrate with a SrRuO3 buffer

Epitaxial PbZr 0.52 Ti 0.48 O 3 (PZT) films with perfectly c-axis oriented tetragonal phase were deposited on SrTiO 3 (STO) substrates using a SrRuO 3 (SRO) buffer layer by pulsed laser deposition (PLD) method. Ferroelectric behavior of PZT on STO substrates along with an improved remnant polarization (2P r ) of 118 μC/cm 2 and a low coercive field (E c ) of 193 kV/cm at 15 V were observed at room temperature indicating that the SRO/STO substrates with small lattice misfit can make some contributions to enhance PZT film's ferroelectric properties. Moreover, the capacitance characteristics of the PZT thin films were detected, a large dielectric constant of 1476, the charging and discharging characteristics determine the large dielectric strength of the PZT thin film capacitors.