Germanium- and silicon-doped indium-oxide thin films prepared by radio-frequency magnetron sputtering

Indium oxide (In2O3) thin films doped with either germanium or silicon were prepared by using a radio-frequency magnetron sputtering method. The target was the In2O3 powder mixed with either Ge or Si powder. The resistivities of the films were compared with that of the film doped with tin (ITO). The Ge and Si dopings yielded lower carrier concentrations and higher Hall mobilities compared to those for Sn doping, and they gave different dependencies of resistivity on atomic ratio. The minimum resistivity of the films doped with Ge was nearly equal to that of ITO.