Controlled Fabrication of α-GaOOH and α-Ga2O3 Self-Assembly and Its Superior Photocatalytic Activity

煅烧 光催化 热液循环 扫描电子显微镜 草酸 透射电子显微镜 材料科学 甲基橙 纳米技术 纳米颗粒 粉末衍射 水热合成 化学工程 核化学 化学 无机化学 结晶学 催化作用 有机化学 工程类 复合材料
作者
M. Muruganandham,R. Amutha,Mahmoud S. M. Abdel Wahed,Bashir Ahmmad,Yasushige Kuroda,Rominder Suri,Jerry J. Wu,Mika Sillanpää
出处
期刊:Journal of Physical Chemistry C [American Chemical Society]
卷期号:116 (1): 44-53 被引量:92
标识
DOI:10.1021/jp205348p
摘要

In this article, we report the fabrication of gallium oxide (α-Ga2O3) microspheres (GOMs) by a self-assembly process. Gallium nitrate with oxalic acid in a hydrothermal process results in α-GaOOH, which was further converted into gallium oxide by calcinations at 450 °C for 3 h. We first report the formation of various morphological α-GaOOH by using the above-mentioned methodology. The influence of hydrothermal temperature and time on the crystal structure and its morphology was studied, and the results indicated that hydrothermal temperature played an important role in the final morphology of α-GaOOH. The flower-like α-GaOOH formed at 175 °C is converted into rodlike α-Ga2O3 after calcination at 450 °C, and the α-GaOOH microsphere and microrod formed at 200 and 225 °C retained their morphology during the calcination process, respectively. The synthesized α-GaOOH and α-Ga2O3 were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and nitrogen adsorption analysis. The XRD patterns indicated that well-crystallized α-GaOOH and α-Ga2O3 were formed in a hydrothermal and calcination process, respectively. The FE-SEM images indicated the formation of well-organized microspheres and microflowers, which were composed of nanoparticles and nanoplates, respectively. The photocatalytic degradation of Acid Orange 7 (AO7) dye and Cr(VI) reduction by using the synthesized GOM under UV light irradiation was investigated. The photocatalytic experiment showed superior photocatalytic activity of GOM having a higher efficiency than TiO2. We propose a plausible mechanism for the formation of various morphologies of α-GaOOH and α-Ga2O3.
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