High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells

量子阱 发光二极管 光电子学 半最大全宽 二极管 量子限制斯塔克效应 自发辐射 材料科学 辐射传输 发射光谱 宽禁带半导体 物理 光学 谱线 激光器 天文
作者
Haocheng Wu,Heng Li,Shiou-Yi Kuo,Bo-Yan Chen,Tien‐Chang Lu,Huamao Huang
出处
期刊:IEEE Transactions on Electron Devices [Institute of Electrical and Electronics Engineers]
卷期号:67 (9): 3650-3654 被引量:20
标识
DOI:10.1109/ted.2020.3007595
摘要

Green resonant-cavity light-emitting diode (RCLED) has great potential in optical communication but suffers low efficiency. In this study, GaN-based flip-chip green RCLED incorporated with nitrogen face-oriented inclination asymmetric trapezoidal quantum wells (NOAT-QWs) is proposed to enhance the light-output power (LOP). Samples with NOAT-QWs and normal symmetric square quantum wells (SS-QWs) were fabricated and characterized. Although their electrical characteristics and emission spectra are similar, the LOP and emission efficiency are significantly improved. At a driving current of 450 mA, the improvement of LOP for RCLED with NOAT-QWs can be as high as 1.44 times in comparison to the sample with SS-QWs. The unprecedented high output power of 115 mW and the narrow full-width-at-half-maximum (FWHM) of 6.4 nm in the emission spectrum give great potential in optical communication. The inherent mechanism was investigated by the finite element analysis, from which the simulation results match well with the experimental measurements. The simulation results reveal that the NOAT-QWs are beneficial in alleviating the quantum confined stark effect and facilitating easier hole carriers' flow across the barriers, leading to more electron-hole wave function overlaps and higher radiative recombination rate.
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