Molecular/Nanostructured Functional Metal Oxide Stacks for Nanoscale Nanosecond Information Storage

Abstract The metal oxide heterostructures market is exponentially growing, adhering to the trend of achieving fabrication versatility on a vast range of nonconventional electromagnetic and optical properties. A high degree of substrate tolerance and solution‐phase growth potential promise low‐cost flexible electronics and silicon‐based process compatibility. A molecule‐based complex oxide nanostructured stack integrated in an electro‐optically operable nonvolatile two‐terminal capacitive memory element is proposed. The cell demonstrates a remarkably high > 7 V memory window and write–read times down to 10 ns, promising for reliable high‐speed storage. Molecular orbital occupancy through broadband optical stimulus enables simultaneous phononic addressing and boosts the written information amount by up to 37%, achieving 10+ years storage duration. The resulting nonvolatile memories are the first‐documented complementary metal oxide semiconductor (CMOS)‐compatible long‐term‐retention molecular capacitive cell of its kind, implementing inherent structure‐emerging heat management. Great potential emerges for numerous energy‐inspired innovations, enabling functional oxide–molecular hybrids exploitation as high‐end nonvolatile memory products.