光探测
光电子学
光电探测器
材料科学
异质结
范德瓦尔斯力
全息术
红外线的
光学
物理
分子
量子力学
作者
Jongtae Ahn,Kyul Ko,Jihoon Kyhm,Hyun‐Soo Ra,Heesun Bae,Sungjae Hong,Dae‐Yeon Kim,Jisu Jang,Tae Wook Kim,Sungwon Choi,Ji Hoon Kang,Namhee Kwon,Soohyung Park,Byeong‐Kwon Ju,Ting‐Chung Poon,Min‐Chul Park,Seongil Im,Do Kyung Hwang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2021-10-22
卷期号:15 (11): 17917-17925
被引量:66
标识
DOI:10.1021/acsnano.1c06234
摘要
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III–V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405–980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
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