Optimization of Perovskite-Solar-Cells with AlOx Passivated NiOx Hole-Transport-Film

Perovskite solar cells have good photoelectric performance and simple fabrication process which received extensive attention in recent years. However, defects-induced carrier recombination strictly inhibits the photovoltaic performance of the device. This paper proposes a simple, fast and efficient interfacial passivation strategy based on sol–gel micro-reaction. The AlO x nanoparticles deposition at NiO x /perovskite interface reduces defect density providing inverted planar PVCs. The influence of aluminum sec-butoxide concentration on the morphology and optical properties of hole-transport layers discovered the internal relationship between the passivation parameters and the carrier transport process at NiO x /perovskite interface. This breakthrough investigation shows the increase in photoelectric efficiency from 12.26% to 14.54% and the retention efficiency from 63% to 72% after 240 h. Therefore, this feasible experiment for interfacial regulation and passivation for PSCs is a gate to new discoveries.