Experimental Investigation on in-situ Laser-Assisted Mechanical Ruling of Single Crystal Silicon

Abstract In this study, response surface methodology (RSM) was employed as a robust and convenient predictive tool to establish the correlation between process parameters of in-situ laser-assisted mechanical ruling and the ductile-to-brittle transition of single-crystal silicon. The interaction effects among three factors laser power, ruling speed, and negative rake angle on the ductile-to-brittle transition of single-crystal silicon were investigated. The optimal combination of process parameters was determined to be a laser power of 30W, a ruling speed of 0.25mm/s, and a negative rake angle of 58°. Utilizing a self-assembled setup and the optimal process parameters, multiple processing experiments were conducted. The average error between the experimental and predicted values was found to be 2.8%.