碳纳米管
跨导
材料科学
振幅
薄脆饼
场效应晶体管
纳米技术
焊接
复合材料
晶体管
光电子学
电气工程
光学
物理
工程类
电压
作者
Bo Zhao,Hongxia Qi,Dong Xu,Yafei Zhang
标识
DOI:10.1080/1536383x.2011.572319
摘要
Abstract Electrophoretic deposition was used to deposite carbon nanotubes (CNTs) on Ti-coated silicon wafers. The effects of amplitude on the CNT nanowelding were studied. The results show that CNTs are compacted and bonded with Ti at the amplitude of 30%. At higher amplitude (60% and 80%), CNTs are cut short or even destructed due to the higher ultrasonic energy and shear force. Applying nanowelding to CNT field effect transistor, the on-off ratio and transconductance are enhanced significantly at the welding amplitude of 30%. Keywords: Carbon nanotubeultrasonic nanoweldingfield effect transistor Acknowledgments This work is supported by Research Fund of Xuzhou Normal University No. 10XLA04, 09XLR10, and Xuzhou Science and Technology Program No. XZZD1001. The authors would be like to thank Dr. Qiming Mao for providing the technological supports.
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