纳米线
材料科学
纳米器件
场效应晶体管
晶体管
光电子学
纳米技术
电气工程
电压
工程类
作者
Lei Liao,Zhou Zhang,Bin Yan,Zhe Zheng,Qiaoliang Bao,Tom Wu,Chang Ming Li,Zexiang Shen,Jixuan Zhang,Hao Gong,Jinchai Li,Ting Yu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2009-02-02
卷期号:20 (8): 085203-085203
被引量:329
标识
DOI:10.1088/0957-4484/20/8/085203
摘要
We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, which makes it a promising candidate for a poisonous gas sensing nanodevice.
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