记忆电阻器
计算机科学
神经形态工程学
冯·诺依曼建筑
瓶颈
人工神经网络
领域(数学)
计算机体系结构
人工智能
嵌入式系统
电子工程
工程类
数学
操作系统
纯数学
作者
Bai Sun,Yuanzheng Chen,Guangdong Zhou,Zelin Cao,Chuan Yang,Junmei Du,Xiaoliang Chen,Jinyou Shao
出处
期刊:ACS Nano
[American Chemical Society]
日期:2023-12-28
卷期号:18 (1): 14-27
被引量:51
标识
DOI:10.1021/acsnano.3c07384
摘要
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.
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