Excellent surface passivation of p-type TOPCon enabled by ozone-gas oxidation with a single-sided saturation current density of ∼ 4.5 fA/cm2

钝化 材料科学 等离子体增强化学气相沉积 非晶硅 饱和电流 太阳能电池 晶体硅 纳米技术 光电子学 图层(电子) 电气工程 电压 工程类
作者
Na Lin,Zhenhai Yang,Haojiang Du,Zetao Ding,Zunke Liu,Haiyang Xing,Mingjing Xiao,Yali Ou,Wei Liu,Mingdun Liao,Baojie Yan,Shihua Huang,Yuheng Zeng,Jichun Ye
出处
期刊:Solar Energy [Elsevier BV]
卷期号:259: 348-355 被引量:15
标识
DOI:10.1016/j.solener.2023.05.028
摘要

High-quality p-type tunnel oxide passivated contact (p-type TOPCon) is a feasible technical solution to further improve the efficiency of TOPCon silicon solar cells. Plasma-enhanced chemical vapor deposition (PECVD) technology route could deposit boron-doped amorphous silicon film in-situ and thus becomes one of the most promising industry routes to prepare the TOPCon structure. However, the passivation quality of p-type TOPCon by PECVD is not satisfactory till now. In this work, we develop the high-performance p-type TOPCon technology by integrating the ozone-gas oxidation to prepare the ultra-thin SiOx film, which shows excellent passivation and contact properties. The experimental results suggest that the double-sided p-type TOPCon passivated samples with p-type Si substrates receive a maximal implied open-circuit voltage (iVoc) of ∼ 734 mV together with a minimum single-sided saturation current density (J0,s) of ∼ 4.5 fA/cm2. Correspondingly, the contact resistivity is less than 5 mΩ·cm2, yielding a high selectivity S10 of 15.6, which is one of the best values for p-type TOPCon technology. As a result, the precursor cell manifests an excellent iVoc of 717 mV, and the p-type silicon solar cell with rear-sided p-type TOPCon passivating contact receives a high efficiency of 22.23%. Generally, this work provides a promising technology for preparing the high-quality p-type TOPCon passivating contact for industrial application.
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