材料科学
金属
纳米技术
金属有机骨架
化学工程
冶金
有机化学
吸附
化学
工程类
作者
Tao Zhang,Peicheng Li,Nan Chen,J. Su,Zhenxin Yang,Dengke Wang,Nan Jiang,Changsheng Shi,Qiang Zhu,H.Y. Yu,Zheng‐Hong Lu
摘要
The performance of LMO-based devices exceeds that of devices constructed with the ITO. The defect-induced gap states act as Anderson–Mott localized quantum states, creating efficient conduction pathways within the LMO electrodes.
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