光子学
拓扑(电路)
相变
拓扑序
拓扑绝缘体
相(物质)
光子晶体
物理
材料科学
光电子学
凝聚态物理
量子力学
数学
量子
组合数学
作者
Takahiro Uemura,Yuto Moritake,Taiki Yoda,H. Chiba,Yusuke Tanaka,Masaaki Ono,Eiichi Kuramochi,Masaya Notomi
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2024-08-23
卷期号:10 (34)
标识
DOI:10.1126/sciadv.adp7779
摘要
Photonic topological insulators (PTIs) have been proposed as an analogy to topological insulators in electronic systems. In particular, two-dimensional PTIs have gained attention for the integrated circuit applications. However, controlling the topological phase after fabrication is difficult because the photonic topology requires the built-in specific structures. This study experimentally demonstrates the band inversion in two-dimensional PTI induced by the phase transition of deliberately designed nanopatterns of a phase change material, Ge 2 Sb 2 Te 5 (GST), which indicates the first observation of the photonic topological phase transition in two-dimensional PTI with changes in the Chern number. This approach allows us to directly alter the topological invariants, which is achieved by symmetry-breaking perturbation through GST nanopatterns with different symmetry from original PTI. The success of our scheme is attributed to the ultrafine lithographic alignment technologies of GST nanopatterns. These results demonstrate how to control photonic topological properties in a reconfigurable manner, providing insight into the possibilities for reconfigurable photonic processing circuits.
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