神经形态工程学
计算机科学
突触
突触重量
铁电性
神经科学
材料科学
人工神经网络
人工智能
光电子学
心理学
电介质
作者
Shaoan Yan,Junyi Zang,Pei Xu,Yingfang Zhu,Gang Li,Qilai Chen,Zhuojun Chen,Yan Zhang,Minghua Tang,Xuejun Zheng
标识
DOI:10.1007/s40843-022-2318-9
摘要
Brain-like computing is an important direction for the development of integrated circuits in the post-Moore era, and the development of artificial synaptic devices that can simulate ideal synaptic behavior is the key to building brainlike computing chips with neuron-synapse-neuron connectivity. Ferroelectric thin film materials have unique nonvolatile polarization, and the plasticity of polarization is very similar to that of biological synapses, so ferroelectric synaptic devices have been widely concerned in recent years. In this paper, the research progress of ferroelectric synaptic devices is reviewed from two aspects, simulation of synaptic function in devices and brain-like computing applications. The results show that ferroelectric synaptic devices have two typical structures of two-terminal and three-terminal. In addition to effectively simulating biological synapse functions, ferroelectric synaptic devices also have the advantages of simple structure, low power consumption, high stability, large switching ratio, and fast programming speed. In terms of applications, a series of advances have been made in the study of ferroelectric synapse-based neural networks for image recognition; meanwhile, ferroelectric synapses have also been applied to tactile and visual bionics. Although abundant research progress has been made, ferroelectric synapses are still at the proof-of-principle stage. There are considerable challenges in the synaptic performance regulation mechanism, reliability evaluation criteria, array structure optimization design, high-density integration process, neuromorphic computing architecture design, and novel application scenario expansion, which are also the directions that need to be focused for future ferroelectric synapse research.
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