Reconfigurable and nonvolatile terahertz lithography-free photonic devices based on phase change films

High-performance terahertz (THz) devices with reconfigurable features are highly desirable in many promising THz applications. However, most of the existing reconfigurable THz elements are still limited to volatile responses, single functionality, and time-consuming multistep manufacturing procedures. In this paper, we report a lithography-free approach to create reconfigurable and nonvolatile THz components by exploring the reversible, nonvolatile, and continuous THz modulation capability of the phase change material Ge 2 Sb 2 Te 5 . As a proof of concept, THz gratings with significant Rayleigh anomalies and diffraction as well as ultrathin THz flat lenses with subwavelength and ultra-broadband focusing capabilities are designed and fabricated on ultrathin Ge 2 Sb 2 Te 5 films using the presented photo-imprint strategy. Moreover, such a method can also be adopted to create more complex THz devices, such as Pancharatnam–Berry phase metasurfaces and grayscale holographic plates. With these findings, the proposed method will provide a promising solution to realize reconfigurable and nonvolatile THz elements.