Construction of a LiF-Rich and Stable SEI Film by Designing a Binary, Ion-, and Electron-Conducting Buffer Interface on the Si Surface

Stabilizing a solid electrolyte interface (SEI) film on the Si surface is a prerequisite for realizing silicon (Si) anode applications. Interfacial engineering is one of the effective strategies to construct stable SEI films on Si surfaces and improve the electrochemical performance of the Si anodes. This work develops a silver (Ag)-decorated mucic acid (MA) buffer interface on the Si surface and the obtained Si@MA*Ag anode retains 1567 mAh g-1 after 500 cycles at 2.1 A g-1 and exhibits 1740 mAh g-1 at 126 A g-1, which are significantly higher than those of the bare Si anode of 247 and 145 mAh g-1 under the same conditions, respectively. Analysis indicates that the improved electrochemical performance is because of the depressed volume effect of the Si particles and the sustained integrity of the electrode laminate during cycling, the enhanced lithium diffusion on the Si surface, and the improved electronic conductivity of the Si anode, as well as the facilitated formation of inorganic components in the SEI film.