CMOS芯片
像素
平版印刷术
材料科学
过程(计算)
集成电路
高分辨率
点间距
光电子学
计算机科学
电气工程
电子工程
计算机硬件
工程类
人工智能
遥感
地质学
操作系统
作者
Juhyuk Park,Dae‐Myeong Geum,Woojin Baek,Johnson Shieh,Sanghyeon Kim
标识
DOI:10.1109/vlsitechnologyandcir46769.2022.9830425
摘要
This work demonstrated the monolithic 3D (M3D) integrated red micro-LED display on Si CMOS driver IC. We achieved a very high pixel density of 1600 PPI by epitaxial layer engineering and low-temperature process design for the micro- display application. M3D sequential integration on pre- fabricated Si CMOS driver IC allows lithographic alignment for the pixel definition, providing high-resolution and the largest emission area per pixel pitch. Furthermore, the low-temperature process provided the lowest standby power among ever reported micro-LED displays. We believe that this work would be one of the milestones for future ultra-high-resolution displays.
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