钝化
材料科学
等离子体增强化学气相沉积
硅
光电子学
氧化硅
氧化物
载流子寿命
退火(玻璃)
兴奋剂
纳米晶硅
图层(电子)
晶体硅
纳米技术
复合材料
非晶硅
冶金
氮化硅
作者
Muhammad Quddamah Khokhar,Shahzada Qamar Hussain,Muhammad Aleem Zahid,Duy Phong Pham,Eun‐Chel Cho,Junsin Yi
摘要
We report on the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer via an experimental and numerical simulation study. The minority carrier lifetime and implied open-circuit voltage reveals an ameliorated passivation property, which gives the motivation to run a simulation. The passivating contact of an ultra-thin silicon oxide (1.2 nm) capped with a plasma enhanced chemical vapor deposition (PECVD) grown 30 nm thick nanocrystalline silicon oxide (nc-SiOx), provides outstanding passivation properties with low recombination current density (Jo) (~1.1 fA/cm2) at a 950 °C annealing temperature. The existence of a thin silicon oxide layer (SiO2) at the rear surface with superior quality (low pinhole density, Dph < 1 × 10−8 and low interface trap density, Dit ≈ 1 × 108 cm−2 eV−1), reduces the recombination of the carriers. The start of a small number of transports by pinholes improves the fill factor (FF) up to 83%, reduces the series resistance (Rs) up to 0.5 Ω cm2, and also improves the power conversion efficiency (PEC) by up to 27.4%. The TOPCon with a modified nc-SiOx exhibits a dominant open circuit voltage (Voc) of 761 mV with a supreme FF of 83%. Our simulation provides an excellent match with the experimental results and supports excellent passivation properties. Overall, our study proposed an ameliorated knowledge about tunnel oxide, doping in the nc-SiOx layer, and additionally about the surface recombination velocity (SRV) impact on TOPCon solar cells.
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