X射线光电子能谱
材料科学
化学工程
薄膜
纳米技术
工程类
作者
Parthasarathi Bera,Chinnasamy Anandan
出处
期刊:RSC Advances
[The Royal Society of Chemistry]
日期:2014-01-01
卷期号:4 (108): 62935-62939
被引量:58
摘要
X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) investigations of interfacial reactions between Ce and Si have been carried out on as-deposited and 15 month aged CeO2/Si and CeO2/Si3N4thin films.
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