佩多:嘘
氧化铟锡
材料科学
电极
聚(3,4-亚乙基二氧噻吩)
导电聚合物
导电体
X射线光电子能谱
化学工程
铟
光电子学
二甲基亚砜
氧化物
有机太阳能电池
纳米技术
无机化学
图层(电子)
化学
有机化学
复合材料
聚合物
冶金
物理化学
工程类
作者
Natalie Kate Unsworth,Ian Hancox,C. Argent Dearden,Paul Sullivan,Marc Walker,R. S. Lilley,J. H. Sharp,T. S. Jones
标识
DOI:10.1016/j.orgel.2014.07.015
摘要
Indium tin oxide (ITO)-free organic photovoltaic (OPV) devices were fabricated using highly conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the transparent conductive electrode (TCE). The intrinsic conductivity of the PEDOT:PSS films was improved by two different dimethyl sulfoxide (DMSO) treatments – (i) DMSO was added directly to the PEDOT:PSS solution (PEDOT:PSSADD) and (ii) a pre-formed PEDOT:PSS film was immersed in DMSO (PEDOT:PSSIMM). X-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (CAFM) studies showed a large amount of PSS was removed from the PEDOT:PSSIMM electrode surface. OPV devices based on a poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulk hetrojunction showed that the PEDOT:PSSIMM electrode out-performed the PEDOT:PSSADD electrode, primarily due to an increase in short circuit current density from 6.62 mA cm−2 to 7.15 mA cm−2. The results highlight the importance of optimising the treatment of PEDOT:PSS electrodes and demonstrate their potential as an alternative TCE for rapid processing and low-cost OPV and other organic electronic devices.
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