材料科学
氧化铟锡
发光二极管
光电子学
退火(玻璃)
透射率
溅射
外延
氮化物
薄膜
图层(电子)
纳米技术
冶金
作者
C.S. Chang,Shoou‐Jinn Chang,Yan‐Kuin Su,Yen-Sheng Lin,Y.P. Hsu,S C Shei,S. C. Chen,C. H. Liu,U. H. Liaw
标识
DOI:10.1088/0268-1242/18/4/102
摘要
Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.
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