铁电性
材料科学
光电子学
晶体管
薄膜
电气工程
纳米技术
电介质
电压
工程类
作者
Hongjia Song,Tao Ding,Xiangli Zhong,J. B. Wang,Bodong Li,Y. Zhang,Congbing Tan,Yichun Zhou
出处
期刊:RSC Advances
[The Royal Society of Chemistry]
日期:2014-01-01
卷期号:4 (105): 60497-60501
被引量:6
摘要
Ferroelectric-gate thin-film transistors (FGTs) with a stacked oxide structure of ZnO/Bi3.15Nd0.85Ti3O12 (BNT)/LaNiO3 (LNO) on Si substrates have been prepared and characterized.
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