单晶硅
硅化物
材料科学
蚀刻(微加工)
硅
沉积(地质)
碳纤维
杂质
氧气
光电子学
复合材料
冶金
分析化学(期刊)
化学
图层(电子)
沉积物
色谱法
有机化学
古生物学
复合数
生物
作者
Jing Zhang,Ding Liu,Yani Pan
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2020-09-28
卷期号:41 (10): 102702-102702
被引量:7
标识
DOI:10.1088/1674-4926/41/10/102702
摘要
Abstract When preparing large monocrystalline silicon materials, severe carbon etching and silicide deposition often occur to the thermal system. Therefore, a suppression method that optimizes the upper insulation structure has been proposed. Assisted by the finite element method, we calculated temperature distribution and carbon deposition of heater and heat shield, made the rule of silicide and temperature distributing in the system, and we explained the formation of impurity deposition. Our results show that the optimized thermal system reduces carbon etching loss on heat components. The lowered pressure of the furnace brings a rapid decrease of silicide deposition. The increase of the argon flow rate effectively inhibits CO and back diffusion. The simulated results agree well with the experiment observations, validating the effectiveness of the proposed method.
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