Light enhanced low-voltage nonvolatile memory based on all-inorganic perovskite quantum dots

Light enhanced low-voltage nonvolatile memory was prepared using all-inorganic perovskite quantum dots (QDs) as a semiconductor layer and Ag nanoparticles (NPs) as a floating gate layer. The photo-induced carriers can be produced in CsPbBr3 QDs under ultraviolet light and trapped in Ag NPs under the action of an external electric field. With the assistance of light, the device exhibited a significantly larger memory window (ΔVth) under low programming and erasing voltages of ±5 V owing to the use of CsPbBr3 QDs. Furthermore, we proved that the ΔVth of the memory strongly depended on the applied bias voltage (VDS) as well as still remaining at 79.3% after 105 s at VDS of 1.4 V. The facile memory provides a new approach to trap a photo-induced charge and reduce operating voltages by combining QDs with metal NPs.