响应度
光电探测器
材料科学
光电子学
纳米线
异质结
偏压
光伏系统
半导体
电压
物理
电气工程
量子力学
工程类
作者
Qinwei An,Xianquan Meng,Ke Xiong,Yunlei Qiu
标识
DOI:10.1038/s41598-017-05176-5
摘要
Abstract In this study, we design and demonstrate a novel type of self-powered UV photodetectors (PDs) using single-crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self-powered UV PDs with asymmetric metal-semiconductor-metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as-assembled PDs have a high on/off ratio of 19173 and a fast response speed (τ r = 0.09 s, τ f = 0.07 s) without any external bias. These values are even higher than that of ZnS nanostructures- and ZnS heterostructure-based PDs at a large bias voltage. Besides, its UV sensivity, responsivity and detectivity at self-powered mode can reach as high as 19172, 2.56 A/W and 1.67 × 10 10 cm Hz 1/2 W −1 , respectively. In addition, the photosensing performance of the self-powered UV PDs is studied in different ambient conditions (e.g., in air and vacuum). Moreover, a physical model based on band energy theory is proposed to explain the origin of the self-driven photoresponse characteristic in our device. The totality of the above study signifies that the present self-powered ZnS NTs-based UV nano-photodetector may have promising application in future self-powered optoelectronic devices and integrated systems.
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