硫族元素
过渡金属
单层
材料科学
光电导性
电导率
电子
金属
电子迁移率
光电子学
纳米技术
化学物理
化学
结晶学
物理化学
冶金
催化作用
物理
量子力学
生物化学
作者
Junpeng Lu,Alexandra Carvalho,Xinhui Kim Chan,Hongwei Liu,Bo Liu,Eng Soon Tok,Kian Ping Loh,A. H. Castro Neto,Chorng Haur Sow
出处
期刊:Nano Letters
[American Chemical Society]
日期:2015-05-04
卷期号:15 (5): 3524-3532
被引量:171
标识
DOI:10.1021/acs.nanolett.5b00952
摘要
As-grown transition metal dichalcogenides are usually chalcogen deficient and therefore contain a high density of chalcogen vacancies, deep electron traps which can act as charged scattering centers, reducing the electron mobility. However, we show that chalcogen vacancies can be effectively passivated by oxygen, healing the electronic structure of the material. We proposed that this can be achieved by means of surface laser modification and demonstrate the efficiency of this processing technique, which can enhance the conductivity of monolayer WSe2 by ∼400 times and its photoconductivity by ∼150 times.
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