材料科学
压电
纳米线
兴奋剂
纳米发生器
电压
光电子学
纳米技术
电流(流体)
电流密度
电气工程
复合材料
量子力学
物理
工程类
作者
Chao‐Hung Wang,Wei‐Shun Liao,Zong‐Hong Lin,Nai‐Jen Ku,Yi‐Chang Li,Yen‐Chih Chen,Zhong Lin Wang,Chuan‐Pu Liu
标识
DOI:10.1002/aenm.201470085
摘要
In article number 1400392, Chuan-Pu Liu and co-workers report the synthesis of Si-doped GaN nanowire arrays with various carrier concentrations to investigate the impact of carrier screening on the output performance of alternating-current (AC) vertical integrated nanogenerators (VINGs). The output voltage and current density of AC VINGs strongly decrease with increasing doping concentration. Consequently, AC VINGs can be optimized if they are composed of piezotronic materials with the lowest possible carrier concentration to prevent the screening effect.
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