硅
基质(水族馆)
混合硅激光器
集成电路
材料科学
纳米技术
绝缘体上的硅
工程物理
半导体
半导体器件
电子线路
计算机科学
光电子学
电气工程
工程类
图层(电子)
地质学
海洋学
作者
Shuiyuan Wang,Xiaoxian Liu,Mingsheng Xu,Liwei Liu,Deren Yang,Peng Zhou
出处
期刊:Nature Materials
[Springer Nature]
日期:2022-10-25
卷期号:21 (11): 1225-1239
被引量:84
标识
DOI:10.1038/s41563-022-01383-2
摘要
Despite technical efforts and upgrades, advances in complementary metal–oxide–semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic ‘on-silicon’ (silicon as the substrate) and ‘with-silicon’ (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
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