纳米壳
材料科学
电介质
分析化学(期刊)
化学
结晶学
纳米颗粒
纳米技术
光电子学
有机化学
作者
Shaun O’Donnell,D. J. Osborn,G. Krishnan,Theresa Block,Aylin Koldemir,Thomas D. Small,Rachel Broughton,Jacob L. Jones,Rainer Pöttgen,Gunther G. Andersson,Gregory F. Metha,Paul A. Maggard
标识
DOI:10.1021/acs.chemmater.2c02192
摘要
The synthesis of kinetically stabilized, i.e., metastable, dielectric semiconductors, represents a major frontier within technologically important fields as compared to thermodynamically stable solids that have received considerably more attention. Of long-standing theoretical interest are Sn(II) perovskites [e.g., Sn(Zr1/2Ti1/2)O3 (SZT)], which are isoelectronic Pb-free analogues of Pb(Zr1/2Ti1/2)O3 (PZT), a commercial piezoelectric composition that is dominant in the electronics industry. Herein, we describe the synthesis of this metastable SZT dielectric through a low-temperature flux reaction technique. The SZT has been found, for the first time, to grow and to be stabilized as a nanoshell at the surfaces of Ba(Zr1/2Ti1/2)O3 (BZT) particles, i.e., forming as BZT–SZT core–shell particles, as a result of Sn(II) cation exchange. In situ powder X-ray diffraction (XRD) and transmission electron microscopy data show that the SZT nanoshells result from the controlled cation diffusion of Sn(II) cations into the BZT particles, with tunable thicknesses of ∼25–100 nm. The SZT nanoshell is calculated to possess a metastability of approximately −0.5 eV atom–1 with respect to decomposition to SnO, ZrO2, and TiO2 and cannot currently be prepared as stand-alone particles. Rietveld refinements of the XRD data are consistent with a two-phase BZT–SZT model, with each phase possessing a generally cubic perovskite-type structure and nearly identical lattice parameters. Mössbauer spectroscopic data (119Sn) are consistent with Sn(II) cations within the SZT nanoshells and an outer ∼5–10 nm surface region comprised of oxidized Sn(IV) cations from exposure to air and water. The optical band gap of the SZT shell was found to be ∼2.2 eV, which is red-shifted by ∼1.2 eV compared to that of BZT. This closing of the band gap was probed by X-ray photoelectron spectroscopy and found to stem from a shift of the valence band edge to higher energies (∼1.07 eV) as a result of the addition of the Sn 5s2 orbitals forming a new higher-energy valence band. In summary, a novel synthetic tactic is demonstrated to be effective in preparing metastable SZT and representing a generally useful strategy for the kinetic stabilization of other predicted, metastable dielectrics.
科研通智能强力驱动
Strongly Powered by AbleSci AI