Enhancing out-of-plane thermal conductivity of polyimide-based composites via the construction of inter-external dual heat conduction network by binary fillers

材料科学 复合材料 热导率 聚酰亚胺 热传导 石墨烯 氮化硼 复合数 热压 氧化物 保温 纳米技术 图层(电子) 冶金
作者
Zhiqiang Wu,Jie Dong,Xiuting Li,Xin Zhao,Chengchang Ji,Qinghua Zhang
出处
期刊:Composites Part B-engineering [Elsevier]
卷期号:266: 111001-111001 被引量:32
标识
DOI:10.1016/j.compositesb.2023.111001
摘要

Polyimide (PI) materials have found widespread utilization in advanced electronic systems. PIs with enhanced out-of-plane thermal conductivity (K⊥) are urgently required to address the rising need for heat dissipation. However, their production remains a formidable challenge due to the difficulty of constructing heat transmission channels along the thickness direction. This study introduces an innovative approach to enhance the K⊥ values of PI-based composites by utilizing binary fillers to construct an inter-external dual heat conduction network. To achieve this, we first prepared PI/reduced graphene oxide (rGO) hybrid microspheres via solution mixing and precipitation. The microspheres were then coated with boron nitride nanosheets (BNNS) by self-assembly to form a core-shell architecture. This assembly undergoes further refinement via cold-pressing and subsequent densification through hot-pressing, ultimately producing the (PI/rGO)@BNNS composites. This strategy improved K⊥ values significantly, with a 13-fold and 3-fold increase in the K⊥ value (3.98 W m−1 K−1) in comparison to pure PI (0.31 W m−1 K−1) and the random distribution composite (1.45 W m−1 K−1), respectively. The finite element analysis confirmed that the synergistic effect of rGO inside the PI phase and BNNS outside the PI phase greatly increased the heat transfer in PI-based composites. When utilized as a thermal interface material (TIM) for LED bulbs, the (PI/rGO)@BNNS composites exhibit an excellent heat dissipation capacity. Additionally, the prepared composites also maintain electrical insulation and present a reduced coefficient of thermal expansion. Overall, our work provides a simple and efficient technique for enhancing the out-of-plane thermal conductivity and maintain the electrical insulation of high-performance PI-based materials, which could have broad application potential in next-generation electronic devices.
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