材料科学
复合材料
热导率
聚酰亚胺
热传导
石墨烯
氮化硼
复合数
氧化物
纳米技术
图层(电子)
冶金
作者
Zhiqiang Wu,Jie Dong,Xiuting Li,Xin Zhao,Chengchang Ji,Jie Dong
标识
DOI:10.1016/j.compositesb.2023.111001
摘要
Polyimide (PI) materials have found widespread utilization in advanced electronic systems. PIs with enhanced out-of-plane thermal conductivity (K⊥) are urgently required to address the rising need for heat dissipation. However, their production remains a formidable challenge due to the difficulty of constructing heat transmission channels along the thickness direction. This study introduces an innovative approach to enhance the K⊥ values of PI-based composites by utilizing binary fillers to construct an inter-external dual heat conduction network. To achieve this, we first prepared PI/reduced graphene oxide (rGO) hybrid microspheres via solution mixing and precipitation. The microspheres were then coated with boron nitride nanosheets (BNNS) by self-assembly to form a core-shell architecture. This assembly undergoes further refinement via cold-pressing and subsequent densification through hot-pressing, ultimately producing the (PI/rGO)@BNNS composites. This strategy improved K⊥ values significantly, with a 13-fold and 3-fold increase in the K⊥ value (3.98 W m−1 K−1) in comparison to pure PI (0.31 W m−1 K−1) and the random distribution composite (1.45 W m−1 K−1), respectively. The finite element analysis confirmed that the synergistic effect of rGO inside the PI phase and BNNS outside the PI phase greatly increased the heat transfer in PI-based composites. When utilized as a thermal interface material (TIM) for LED bulbs, the (PI/rGO)@BNNS composites exhibit an excellent heat dissipation capacity. Additionally, the prepared composites also maintain electrical insulation and present a reduced coefficient of thermal expansion. Overall, our work provides a simple and efficient technique for enhancing the out-of-plane thermal conductivity and maintain the electrical insulation of high-performance PI-based materials, which could have broad application potential in next-generation electronic devices.
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