过电流
功率半导体器件
可靠性(半导体)
电气工程
工程物理
电力电子
功率(物理)
薄脆饼
数码产品
过电压
材料科学
电压
计算机科学
光电子学
工程类
物理
量子力学
作者
Yuan Qin,Zhengpeng Wang,Kohei Sasaki,Jiandong Ye,Yuhao Zhang
标识
DOI:10.35848/1347-4065/acb3d3
摘要
Abstract Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga 2 O 3 power devices have emerged globally, and the scope of these works have gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga 2 O 3 in a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state-of-the-art of the ampere-class Ga 2 O 3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.
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