A Fast and Soft Reverse Recovery Diode With a Punch-Through NPN Structure

A fast and soft reverse recovery diode with a Punch-Through (PT) NPN structure is proposed and experimentally demonstrated. The structure features a P-type Schottky contact, a PT-NPN region for electron extraction, and a trench region with the bottom surrounded by a P-layer. Compared with conventional Self-adjusting P Emitter Efficiency Diode (SPEED), the proposed PT-NPN diode provides a much larger softness factor ${S}$ (+23%), a shorter reverse recovery time ${T}_{\text {rr}}$ (−5%), and a much reduced reverse recovery charge ${Q}_{\text {rr}}$ (−20%) at nominal current.