Bright and Stable Yellow Quantum Dot Light‐Emitting Diodes Through Core–Shell Nanostructure Engineering

Abstract Solution‐processed and efficient yellow quantum dot light‐emitting diodes (QLEDs) are considered key optoelectronic devices for lighting, display, and signal indication. However, limited synthesis routes for yellow quantum dots (QDs), combined with inferior stress‐relaxation of the core–shell interface, pose challenges to their commercialization. Herein, a nanostructure tailoring strategy for high‐quality yellow CdZnSe/ZnSe/ZnS core/shell QDs using a “stepwise high‐temperature nucleation‐shell growth” method is introduced. The synthesized CdZnSe‐based QDs effectively smoothed the release stress of the core–shell interface and revealed a near‐unit photoluminescence quantum yield, with nonblinking behavior and matched energy level, which accelerated radiative recombination and charge injection balance for device operation. Consequently, the yellow CdZnSe‐based QLEDs exhibited a peak external quantum efficiency of 23.7%, a maximum luminance of 686 050 cd m −2 , and a current efficiency of 103.2 cd A −1 , along with an operating half‐lifetime of 428 523 h at 100 cd m −2 . To the best of the knowledge, the luminance and operational stability of the device are found to be the highest values reported for yellow LEDs. Moreover, devices with electroluminescence (EL) peaks at 570–605 nm exhibited excellent EQEs, surpassing 20%. The work is expected to significantly push the development of RGBY‐based display panels and white LEDs.