背景(考古学)
功率半导体器件
功率(物理)
功率MOSFET
工作(物理)
电气工程
MOSFET
电子工程
计算机科学
可靠性工程
工程类
机械工程
物理
晶体管
电压
生物
古生物学
量子力学
作者
R. Tambone,Alessandro Ferrara,Ralf Siemieniec,A.C.G. Wood,Filippo Magrini,R.J.E. Hueting
标识
DOI:10.1109/ted.2024.3394463
摘要
Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context, modeling and simulation are crucial, several proposed models used to analyze the device ruggedness are discussed. Finally, similar to Part I of this article, work guidelines to prevent failure are provided.
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