氮化镓
材料科学
碳化硅
光电子学
接口
集成电路
基质(水族馆)
减刑
切换时间
快速切换
电子线路
宽禁带半导体
电力电子
电气工程
电子工程
计算机科学
工程类
纳米技术
电压
计算机硬件
冶金
地质学
图层(电子)
海洋学
作者
Eduard Dechant,N. Seliger,Ralph Kennel
摘要
Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies.
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