拉曼光谱
声子
各向异性
半导体
材料科学
相干反斯托克斯拉曼光谱
激发
拉曼散射
凝聚态物理
分子物理学
光学
化学
光电子学
物理
量子力学
作者
Wentao Gong,Liang Li,Peng-Lai Gong,Yulan Zhou,Zhitao Zhang,Weichang Zhou,Weike Wang,Ziran Liu,Dongsheng Tang
摘要
This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.
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