An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrO x could suppress the formation of V o and improve the InO x /ZrLaO interface. The Zr 0.9 La 0.1 O y thin films remained stable under 144 krad (SiO 2 ) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InO x /Zr 0.9 La 0.1 O y TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO 2 ) irradiation.