石墨烯
材料科学
纳米技术
化学气相沉积
铜
基质(水族馆)
石墨烯纳米带
石墨烯泡沫
氧化石墨烯纸
单晶
箔法
催化作用
Crystal(编程语言)
化学工程
氧化物
复合材料
冶金
化学
结晶学
有机化学
程序设计语言
工程类
地质学
海洋学
计算机科学
作者
Xiaozhi Xu,Zhihong Zhang,Lu Qiu,Jianing Zhuang,Liang Zhang,Huan Wang,Chongnan Liao,Huading Song,Ruixi Qiao,Peng Gao,Zonghai Hu,Lei Liao,Zhi‐Min Liao,Dapeng Yu,Li Wang,Feng Ding,Hailin Peng,Kaihui Liu
标识
DOI:10.1038/nnano.2016.132
摘要
Single-crystal graphene can be grown on a copper foil at a rate of 60 μm s-1 by using an adjacent oxide substrate that continuously supplies oxygen to the surface of the copper catalyst. Graphene has a range of unique physical properties1,2 and could be of use in the development of a variety of electronic, photonic and photovoltaic devices3,4,5. For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness6,7,8,9,10,11,12,13,14,15. However, the rates of growth for graphene by CVD on copper are less than 0.4 μm s–1, and therefore the synthesis of large, single-crystal graphene domains takes at least a few hours. Here, we show that single-crystal graphene can be grown on copper foils with a growth rate of 60 μm s–1. Our high growth rate is achieved by placing the copper foil above an oxide substrate with a gap of ∼15 μm between them. The oxide substrate provides a continuous supply of oxygen to the surface of the copper catalyst during the CVD growth, which significantly lowers the energy barrier to the decomposition of the carbon feedstock and increases the growth rate. With this approach, we are able to grow single-crystal graphene domains with a lateral size of 0.3 mm in just 5 s.
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