蚀刻(微加工)
等离子体刻蚀
干涉测量
材料科学
硅
反应离子刻蚀
等离子体
光电子学
图层(电子)
光学
纳米技术
物理
量子力学
作者
Wei Wang,Zhongwen Lan,Weifeng Wu,Yungui Gong
标识
DOI:10.1109/icemi.2007.4351131
摘要
The optical interferometry is a non-invasive plasma diagnostic method. Etch experiment were carried out in a high density plasma etching tool (ICP). The theoretical model for optical interferometric endpoint detection and prediction in plasma etching are presented. It is observed that the optical properties of oxide layer and polysilicon layer can affect the interferometric signals. The endpoint algorithm and real time plasma parameters diagnostics are discussed, then process control with optical interferometry during the poly-silicon etch is described. The endpoint prediction technique has been applied to poly-silicon gate etching in high density plasma etching tools.
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