Ligand-Driven Grain Engineering of High Mobility Two-Dimensional Perovskite Thin-Film Transistors

Controlling grain growth is of great importance in maximizing the charge carrier transport for polycrystalline thin-film electronic devices. The thin-film growth of halide perovskite materials has been manipulated via a number of approaches including solvent engineering, composition engineering, and post-treatment processes. However, none of these methods lead to large-scale atomically flat thin films with extremely large grain size and high charge carrier mobility. Here, we demonstrate a novel π-conjugated ligand design approach for controlling the thin-film nucleation and growth kinetics in two-dimensional (2D) halide perovskites. By extending the π-conjugation and increasing the planarity of the semiconducting ligand, nucleation density can be decreased by more than 5 orders of magnitude. As a result, wafer-scale 2D perovskite thin films with highly ordered crystalline structures and extremely large grain size are readily obtained. We demonstrate high-performance field-effect transistors with hole mobility approaching 10 cm² V^-1 s^-1 with ON/OFF current ratios of ∼10⁶ and excellent stability and reproducibility. Our modeling analysis further confirms the origin of enhanced charge transport and field and temperature dependence of the observed mobility, which allows for clear deciphering of the structure-property relationships in these nascent 2D semiconductor systems.