SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiN x ‐based digital‐type RRAM with analog‐type RRAM by heterogeneous integration method. The Pt/SiN x /Ta/Ru is a digital RRAM due to the formation and breakage of the internal silicon dangling bonds conductive filaments, and the TiN/SiN x /Ta/Ru structure is an analog RRAM due to the traps‐filled limit region of the space‐charge limited current. The heterogeneously integrated digital RRAM has good cycling stability and endurance characteristics, and the heterogeneously integrated analog RRAM has high linearity and multistate counting characteristics. This heterogeneous integration approach is useful for the implementation of hybrid digital–analog RRAM.